@greenpath0
Active 1 day, 12 hours ago
19 mg/g, which has not been previously reported.In the current research, p-type Si/n-type nanocrystalline FeSi₂ heterojunctions were fabricated at room temperature with an argon pressure of 2.66×10-1 Pa by means of the utilization of a radiofrequency magnetron sputtering technique. These heterojunctions were studied for the carrier tr […] View
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Haastrup Abbott posted an update 2 days, 7 hours ago
19 mg/g, which has not been previously reported.In the current research, p-type Si/n-type nanocrystalline FeSi₂ heterojunctions were fabricated at room temperature with an argon pressure of 2.66×10-1 Pa by means of the utilization of a radiofrequency magnetron sputtering technique. These heterojunctions were studied for the carrier tr…[Read more]
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Haastrup Abbott became a registered member 2 days, 8 hours ago
